2N7002K 72K

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate MOSFETs 2N7002K N-channel MOSFET SOT-23 FEATURES z High density cell design for Low RDS（on） z Voltage controlled small signal switch z Rugged and reliable z High saturation current capability z ESD protected up to 2KV Marking: 72K MOSFET MAXIMUM RATINGS (Ta = 25°C unless otherwise noted) Value Units 60 V VGS Drain-Source voltage Gate-Source voltage ID Drain Current 340 mA PD Power Dissipation 0.35 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55-150 ℃ RθJA Thermal Resistance fromJunction to Ambient 357 ℃ /W Symbol VDS Parameter 20 1. GATE 2. SOURCE 3. DRAIN Equivalent circuit V MOSFET ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test Condition Min Typ Max Units Static Characteristics Drain-Source Breakdown Voltage Gate Threshold Voltage* Zero Gate Voltage Drain Current Gate –Source leakage current Drain-Source On-Resistance* VDS VGS = 0V, ID =250µA 60 VGS(th) VDS =VGS, ID =1mA 1 IDSS VDS =48V,VGS = 0V IGSS1 V 2.5 V 1 µA VGS =±20V, VDS = 0V ±10 µA IGSS2 VGS =±10V, VDS = 0V ±200 nA IGSS3 VGS =±5V, VDS = 0V ±100 nA 5.3 Ω 5 Ω 1.5 V RDS(on) VGS = 4.5V, ID =200mA VGS =10V,ID =500mA Diode Forward Voltage VSD VGS=0V, IS=300mA Recovered charge Qr VGS=0V,IS=300mA,VR=25V, dls/dt=-100A/µS 30 nC Dynamic Characteristics** Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss VDS =10V,VGS =0V,f =1MHz 40 pF 30 pF 10 pF 10 ns 15 ns Switching Characteristics** Turn-On Delay Time td(on) Turn-Off Delay Time td(off) Reverse recovery Time trr VGS=10V,VDD=50V,RG=50Ω, RGS=50Ω, RL=250Ω VGS=0V,IS=300mA,VR=25V, dls/dt=-100A/µS 30 ns GATE-SOURCE ZENER DIODE Gate-Source Breakdown Voltage BVGSO Igs=±1mA (Open Drain) Notes : *Pulse Test : Pulse Width ≤300µs, Duty Cycle ≤2%. **These parameters have no way to verify. ±21.5 ±30 V B,Apr,2014 Typical Characteristics 2N7002K Transfer Characteristics Output Characteristics 1.0 1.0 Ta=25℃ VGS=10,7,6,5V 0.8 Pulsed 0.8 (A) (A) VGS=4V ID ID 0.6 DRAIN CURRENT DRAIN CURRENT Ta=25℃ Pulsed 0.4 VGS=3V 0.2 0.0 0.6 0.4 0.2 0 1 2 3 4 DRAIN TO SOURCE VOLTAGE RDS(ON) —— 10 VDS 0.0 5 0 (V) 1 2 3 4 GATE TO SOURCE VOLTAGE RDS(ON) ID —— 10 VGS 5 VGS Ta=25℃ Ta=25℃ Pulsed Pulsed 8 ( ) RDS(ON) 6 ON-RESISTANCE RDS(ON) ( ) 8 ON-RESISTANCE 6 (V) 4 VGS=4.5V 2 6 ID=500mA 4 2 VGS=10V 0 0 200 400 600 DRAIN CURRENT IS 10 —— 800 ID 1000 1200 0 0 2 4 6 GATE TO SOURCE VOLTAGE (mA) 8 VGS 10 (V) VSD Ta=25℃ Pulsed SOURCE CURRENT IS (A) 1 0.1 0.01 1E-3 0.0 0.5 1.0 1.5 SOURCE TO DRAIN VOLTAGE 2.0 VSD 2.5 3.0 (V) B,Apr,2014 Symbol A A1 A2 b c D E E1 e e1 L L1 θ Dimensions In Millimeters Min Max 0.900 1.150 0.000 0.100 0.900 1.050 0.300 0.500 0.080 0.150 2.800 3.000 1.200 1.400 2.250 2.550 0.950 TYP 1.800 2.000 0.550 REF 0.300 0.500 0° 8° Dimensions In Inches Min Max 0.035 0.045 0.000 0.004 0.035 0.041 0.012 0.020 0.003 0.006 0.110 0.118 0.047 0.055 0.089 0.100 0.037 TYP 0.071 0.079 0.022 REF 0.012 0.020 0° 6° B,Apr,2014